Skip to main content
STMicroelectronics STPSC12065G2-TR — Discrete Semiconductors

ST STPSC12065G2-TR SiC Schottky Diode, 650V 12A, Zero trr

MPNSTPSC12065G2-TR
Active

STMicroelectronics STPSC12065G2-TR, Silicon Carbide Schottky Diode, 650 V DC Reverse Voltage (Max), 12 A Average Rectified Current (Io), Zero Reverse Recovery Time (trr), D²PAK (TO-263) Surface-Mount Package, -40°C to 175°C Junction Temperature, ECOPACK®2, Active.

$4.4100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC12065G2-TR specifications
ParameterValue
SeriesECOPACK®2
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 12 A
Current - reverse leakage @ vr150 µA @ 650 V
Current - average rectified12A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr,750pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

Zero trr — the switching-loss killer

In a hard-switched PFC boost stage or LLC converter, that eliminates the reverse-recovery loss that dominates silicon ultrafast diode dissipation above 50 kHz.

650 V / 12 A — where it sits in the power stage

Rated for 650 V reverse voltage and 12 A average forward current, this diode fits the output rectifier slot in a 1–2 kW PFC stage or the secondary-side freewheeling diode in a 500 W–1 kW LLC converter. The 1.45 V forward voltage at 12 A is the conduction loss floor; the 150 µA reverse leakage at 650 V is low enough to keep the off-state thermal contribution negligible at 175 °C junction.

175 °C junction — sealed-enclosure margin

In a sealed power supply with no forced air, the 175 °C ceiling gives headroom for the diode to run at 12 A while the ambient inside the enclosure climbs toward 85–105 °C. The D²PAK (TO-263) footprint on a 2 oz copper pad can sink the 17.4 W conduction loss at 12 A, provided the PCB copper area is sized per the thermal model.

Frequently asked questions

What is the reverse recovery time of STPSC12065G2-TR?

The STPSC12065G2-TR has a reverse recovery time of 0 ns, because it is a silicon carbide Schottky diode with no minority-carrier storage.

What is the difference between STPSC12065G2-TR and STPSC12065G2?

The bare STPSC12065G2 is typically supplied in tube or bulk. The diode die and electrical ratings are identical.