SiC Schottky for automotive power stages
The STPSC12065DY is a 650 V, 12 A silicon carbide Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. It is designed for hard-switched power conversion in automotive environments — on-board chargers, DC-DC converters, and PFC stages where the zero-reverse-recovery characteristic directly cuts switching losses and EMI.
The reverse recovery time is 0 ns, which is inherent to the SiC Schottky barrier — there is no minority carrier storage to sweep out. In a continuous-conduction-mode PFC or a hard-switched full-bridge, this eliminates the reverse-recovery current spike that costs a silicon ultrafast diode in turn-off loss and ringing. The 750 pF capacitance at 0 V, 1 MHz is the junction capacitance you see in the switching loop; it is lower than an equivalent-rated silicon diode, so the capacitive turn-on loss is also reduced. The forward voltage drop is 1.45 V maximum at 12 A, 25 °C junction. That is the conduction loss floor at rated current — derate for the positive temperature coefficient as the die heats up. The 50 µA reverse leakage at 600 V, 25 °C is typical for a 650 V SiC Schottky; leakage doubles every 10 °C rise, so at 175 °C junction it dominates the off-state loss budget.
The base product number is STPSC12065, and the DY suffix denotes the TO-220AC package and the automotive grade.
Through-hole TO-220AC package, two leads, with the tab as the cathode. The mounting hole is sized for an M3 screw; the tab must be electrically isolated from the heatsink unless the heatsink is at the cathode potential. The package ships in tube form.