Why zero reverse recovery time matters in a PFC boost stage
The STPSC12065D is a 650 V, 12 A SiC Schottky diode from STMicroelectronics' ECOPACK®2 series. In a hard-switched boost PFC, that eliminates the reverse-recovery current spike that plagues ultrafast silicon diodes, cutting switching losses and reducing EMI filter burden.
12 A average, 650 V blocking — what it covers
With 12 A average rectified current and 650 V DC reverse voltage, this diode fits the boost stage of 1–3 kW PFC stages, LLC converters, and photovoltaic inverters. The forward voltage drop is 1.45 V at 12 A and 25 °C junction, which sets the conduction loss floor. At elevated junction temperatures the Vf rises slightly, but the zero-recovery switching loss stays negligible — the efficiency gain widens as switching frequency increases. Reverse leakage at 650 V is 150 µA. The SiC Schottky structure keeps leakage lower than a comparable silicon ultrafast at the same voltage.
The STPSC12065D comes in a TO-220-2 (TO-220AC) through-hole package. The two-lead format — anode and cathode — simplifies layout: the metal tab is the cathode, so the tab can be bolted directly to the heatsink or chassis ground in a common-cathode configuration. The 750 pF capacitance at 0 V, 1 MHz is typical for a 12 A SiC die; it affects switching losses only at very light load and high frequency.
Active production, no end-of-life timeline
ROHS3 compliant per the ECOPACK®2 designation — no conflict with EU RoHS requirements.