The STPSC10H12WL is a 1200 V, 10 A silicon carbide Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. Rated for junction temperatures up to 175 °C.
1200 V blocking, 10 A forward — the load and rail envelope
The 1200 V DC reverse rating covers 400 VDC bus rails with margin for switching overshoot, and it reaches into 800 VDC systems used in solar string inverters and three-phase EV chargers. The 10 A average rectified current at a forward voltage drop of 1.5 V max at 10 A means conduction loss sits around 15 W at full load — the DO-247 package's large tab area is sized to sink that into a heatsink. Reverse leakage is 60 µA at the rated 1200 V, which is typical for a SiC Schottky of this die size. The junction capacitance measures 725 pF at 0 V bias, 1 MHz — this capacitance charges and discharges every switching cycle, so the gate driver sees a reactive load in addition to the diode's forward current.
Active production — no LTB scramble on this BOM line
For a BOM that already qualifies a SiC Schottky, this diode can be specified without a lifecycle contingency plan. The DO-247 through-hole package with straight leads is a common power-semiconductor footprint. It mates with standard heatsink clips and PCB hole patterns used across the STPSC10 family (base product number STPSC10).