STMicroelectronics STPSC10H12G2Y-TR, Automotive AEC-Q101 SiC Schottky diode, 1200 V reverse voltage, 10 A average rectified current, zero reverse recovery time, D2PAK HV surface-mount package, -40°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | ECOPACK®2 |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.5 V @ 10 A |
| Current - reverse leakage @ vr | 60 µA @ 1200 V |
| Current - average rectified | 10A |
| Operating temperature - junction | -40°C ~ 175°C |
| Grade | Automotive |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Qualification | AEC-Q101 |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Capacitance @ vr, | 725pF @ 0V, 1MHz |
| Reverse recovery time | 0 ns |
The STPSC10H12G2Y-TR is an STMicroelectronics silicon-carbide Schottky diode rated for 1200 V reverse voltage and 10 A average rectified current.
The 175°C Tj max allows the die to run hot without derating the blocking voltage, but the forward voltage drop of 1.5 V at 10 A still generates conduction loss that must be sunk through the D2PAK HV package's exposed tab.
Yes, it carries AEC-Q101 qualification and is listed with an Automotive grade, making it suitable for automotive power train and battery management applications.
Zero nanoseconds. As a SiC Schottky diode, it has no minority carrier storage, so there is no reverse recovery charge to dissipate. This eliminates turn-off losses in hard-switched topologies like PFC boost or DC-DC converters.