1200 V SiC Schottky — the switching-loss killer
The STPSC10H12G2-TR is a silicon carbide Schottky diode from STMicroelectronics, rated for a maximum reverse voltage of 1200 V and an average forward current of 10 A. Its zero reverse recovery time eliminates the turn-off loss and snubber complexity that silicon ultrafast diodes demand in hard-switched converters.
With a listed reverse recovery time of 0 ns, this diode contributes no reverse-recovery charge at turn-off. In a continuous-conduction-mode PFC stage, that directly cuts the MOSFET turn-on loss and lets the designer shrink or eliminate the RC snubber across the diode. Forward voltage is 1.5 V maximum at 10 A. The D2PAK HV package relies on the PCB copper area for thermal spreading to keep junction temperature below 175 °C.