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STMicroelectronics STPSC10H12G-TR — Discrete Semiconductors

STPSC10H12G-TR SiC Schottky Diode, 1.2 kV 10 A, D²PAK

MPNSTPSC10H12G-TR
Active

STMicroelectronics STPSC10H12G-TR, SiC (Silicon Carbide) Schottky Diode, 1200 V, 10 A, Zero Reverse Recovery Time, D²PAK (TO-263AB), Surface Mount, -40°C to 175°C Junction.

$6.3600Ref. price · indicative, final on quote
STMicroelectronics STPSC10H12G-TR datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesECOPACK®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC10H12G-TR specifications
ParameterValue
SeriesECOPACK®
MountingSurface Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 10 A
Current - reverse leakage @ vr60 µA @ 1200 V
Current - average rectified10A
Operating temperature - junction-40°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySiC (Silicon Carbide) Schottky
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr,725pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

The STPSC10H12G-TR is a 1200 V, 10 A silicon-carbide Schottky diode from STMicroelectronics, part of the ECOPACK® series. Its defining characteristic is zero reverse recovery time (trr = 0 ns).

1.5 V forward drop at 10 A — the thermal trade-off

At 10 A and 175°C junction, the forward drop hits 1.5 V. The 725 pF capacitance at 0 V is moderate.

Reverse leakage at 1200 V — 60 µA, not a concern

Leakage is 60 µA at the full 1200 V blocking voltage.

The STPSC10H12G-TR is listed as Active. It is RoHS3 compliant.

Frequently asked questions

What is the reverse recovery time of the STPSC10H12G-TR?

The reverse recovery time (trr) is 0 ns. As a SiC Schottky diode, it has no stored charge and therefore zero reverse recovery — no switching loss from the diode turn-off.

Is the STPSC10H12G-TR RoHS compliant?

Yes, it is RoHS3 compliant.