SiC Schottky — zero recovery loss in hard-switched stages
The STPSC10H12CWL is a 1200 V, 19 A average-rated SiC Schottky diode array from STMicroelectronics, configured as a common-cathode pair in a single TO-247-3 package. Its zero reverse-recovery time (trr = 0 ns) eliminates the switching loss component that dominates silicon diode dissipation in continuous-conduction-mode PFC, LLC resonant converters, and motor-drive boost stages.
1200 V blocking, 19 A average — headroom for 400 VDC bus designs
Each diode in the pair is rated for 19 A average rectified current (Io) and 1200 V DC reverse voltage. The 1.5 V forward drop at 5 A gives a predictable conduction loss floor, while the 30 µA reverse leakage at rated Vr stays low enough to avoid thermal runaway in high-temperature operation. The junction temperature range extends to 175 °C, allowing the die to run hotter than a typical silicon ultrafast diode without derating the current — useful when the heatsink is shared with a MOSFET bridge running at 100 kHz.
Common-cathode pair in a single TO-247-3
Two SiC Schottky dice share the cathode tab inside one TO-247-3 package. This cuts board area and assembly cost compared to two discrete TO-220 or TO-247 parts, and the common-cathode layout suits boost PFC stages where both anodes connect to separate inductors and the cathode ties to the output rail.
It is ROHS3 compliant and manufactured under the ECOPACK series, which means the mould compound and lead finish are free of antimony and brominated flame retardants.