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STMicroelectronics STPSC10H12B-TR1 — Discrete Semiconductors

STPSC10H12B-TR1 SiC Schottky Diode, 1200 V, 10 A, DPAK

MPNSTPSC10H12B-TR1
Obsolete

STMicroelectronics STPSC10H12B-TR1, Silicon Carbide Schottky diode, 1200 V reverse voltage, 10 A average rectified current, zero reverse recovery time, DPAK surface-mount package.

$6.3000Ref. price · indicative, final on quote
STMicroelectronics STPSC10H12B-TR1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STPSC10H12B-TR1 specifications
ParameterValue
SeriesECOPACK®
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 10 A
Current - reverse leakage @ vr60 µA @ 1200 V
Current - average rectified10A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Capacitance @ vr,725pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

The STPSC10H12B-TR1 is listed as obsolete.

Silicon Carbide Schottky — 1200 V, 10 A, zero recovery

The zero reverse recovery time (trr) eliminates the switching loss tail that plagues silicon ultrafast diodes, which matters directly for efficiency in hard-switched topologies like PFC boost or flyback converters. Maximum forward voltage is 1.5 V at 10 A, and reverse leakage is 60 µA at 1200 V.

DPAK package and board fit

Housed in a TO-252-3 (DPAK) surface-mount package with two leads and a tab. The part is part of the ECOPACK® series, meaning it meets ST's halogen-free and antimony-free material declaration for RoHS compliance.

Frequently asked questions

What are the specifications of STPSC10H12B-TR1?

It is a 1200 V, 10 A Silicon Carbide Schottky diode with zero reverse recovery time, 1.5 V max forward voltage at 10 A, 60 µA reverse leakage at 1200 V, junction temperature range -40°C to 175°C, and a DPAK surface-mount package.