650 V, 10 A SiC Schottky — zero-recovery switching
The STPSC10H065G2-TR is a 650 V, 10 A silicon carbide Schottky diode from STMicroelectronics in a D2PAK surface-mount package.
With trr specified at 0 ns, this diode contributes no reverse-recovery charge at turn-off. In a 100 kHz PFC boost stage, that saves roughly 3–5 W of switching loss compared to a 50 ns ultrafast silicon diode at the same 10 A and 650 V — the difference between a 60 °C heatsink and a 90 °C one. The 480 pF output capacitance at 0 V is the remaining switching charge; at 100 kHz and 400 V bus, the capacitive switching loss is about 1.5 W — well within the D2PAK's thermal capability at 175 °C junction.
Conduction loss and thermal headroom
Forward voltage is 1.75 V maximum at 10 A and 25 °C junction — expect about 2.1 V at 150 °C junction per the SiC Vf positive temperature coefficient. At 10 A average, conduction loss runs 17.5 W at 25 °C, rising to 21 W hot. The 175 °C maximum junction rating gives enough headroom to run that dissipation in a D2PAK with proper copper-board thermal management. Reverse leakage is 100 µA at 650 V and 25 °C — negligible at room temperature, but doubles roughly every 10 °C above 100 °C. At 150 °C junction, leakage can reach several milliamps, adding about 1 W of standby loss that must be factored into the thermal model.
Active production, ROHS3, and shelf life
ROHS3 compliant, no lead or restricted-substance exemptions to track. Store the reels in dry conditions per the MSL rating; the D2PAK package is typically MSL 1 or 3, so confirm the moisture barrier bag seal before reflow.