SiC Schottky — zero-recovery switching for PFC and flyback stages
The STPSC10H065G-TR is a 650 V, 10 A silicon-carbide Schottky diode from STMicroelectronics, built for hard-switched power converters where reverse-recovery losses dominate the thermal budget. Its zero reverse recovery time (trr = 0 ns) means the diode never stores minority carriers — the turn-off transition is purely capacitive, so switching losses are effectively eliminated.
650 V blocking, 10 A forward — thermal headroom in a D²PAK
Rated for 650 V DC reverse and 10 A average forward current, the diode covers the 400 V bus rectification in single-phase PFC stages and 250 W – 500 W offline supplies. The maximum forward voltage drop is 1.75 V at 10 A and 25 °C junction — this is the conduction-loss floor at full load. Reverse leakage is specified at 100 µA at 650 V and 25 °C; expect it to rise with junction temperature, but the SiC wide-bandgap structure keeps leakage an order of magnitude below a comparable Si ultrafast diode at the same voltage.