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STMicroelectronics STPSC10H065DY — Discrete Semiconductors

STMicroelectronics STPSC10H065DY SiC Schottky Diode

MPNSTPSC10H065DY
Obsolete

STMicroelectronics STPSC10H065DY, Automotive AEC-Q101 SiC Schottky diode, 650 V reverse, 10 A average, TO-220-2 through-hole, ECOPACK®2 RoHS3 compliant.

$3.7500Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, ECOPACK®2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STPSC10H065DY specifications
ParameterValue
SeriesECOPACK®2
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.75 V @ 10 A
Current - reverse leakage @ vr100 µA @ 650 V
Current - average rectified10A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
QualificationAEC-Q101
CaseTO-220-2
Capacitance @ vr,480pF @ 0V, 1MHz

Product details

SiC Schottky — zero-recovery switching

The STPSC10H065DY is a 650 V, 10 A average silicon-carbide Schottky diode in a TO-220AC package. Its SiC Schottky barrier delivers zero reverse recovery charge — the diode turns off with no stored minority carriers, so switching losses stay flat across temperature and load. This makes it a strong fit for continuous-conduction-mode PFC stages, boost converters, and output rectification in on-board chargers and DC-DC converters where the 650 V rating covers a 400 V bus with margin. Automotive AEC-Q101 qualification (Grade 0 implied by the -40 to 175 °C junction range) means the part has passed the reliability screening for under-hood and transmission-mounted electronics — thermal cycling, high-temperature reverse bias, and humidity testing per the automotive stress standards.

Conduction and thermal budget

Forward voltage is 1.75 V maximum at 10 A and 25 °C junction. At full rated current that is 17.5 W conduction loss — the TO-220 tab needs a heatsink sized for the junction-to-case thermal resistance, especially in a 175 °C ambient environment. The 480 pF capacitance at 0 V, 1 MHz keeps the switching node capacitance low enough for MHz-range operation without excessive ringing on the gate-drive loop. Reverse leakage is 100 µA at 650 V rated reverse voltage. SiC leakage rises with temperature but stays orders of magnitude below silicon fast-recovery diodes at the same junction temperature, so the diode does not thermally run away in high-temperature idle conditions.

Obsolete — sourcing through independent channels

STMicroelectronics has marked the STPSC10H065DY as obsolete. No official successor part number is published. For a BOM that already uses this diode, the closest functional peer is the STPSC10C065RY, which shares the same 650 V / 10 A SiC Schottky die in the same TO-220AC package but carries a 'No Recovery Time' speed classification instead of the 'Fast Recovery' label. It drops into the same footprint without a board spin.

Rework and board-fit note

TO-220 through-hole — two leads and a tab. The tab is the cathode; the anode is the left lead when the package is viewed with the tab to the rear. Standard 1.0 mm drill holes and a copper pad under the tab for thermal relief. The part survives hot-air rework without issue — the SiC die is mechanically robust, and the lead frame takes solder-wick and iron heat without pad lift. Just pre-tin the tab pad and let the solder flow through the hole.

Frequently asked questions

What is the closest functional second-source for the STPSC10H065DY?

The STPSC10C065RY is the closest peer — same 650 V reverse voltage, same 10 A average current, same SiC Schottky technology, same TO-220AC package. It drops into the same footprint without rewiring or a board spin. The only parametric difference is the speed classification: the C065RY carries 'No Recovery Time' while the H065DY carries 'Fast Recovery'.

Where can I buy the STPSC10H065DY and how is it quoted?

Submit an RFQ for lot-specific pricing and lead time.