SiC Schottky — zero recovery, 650 V, 10 A
The STPSC10H065D is a 650 V, 10 A Silicon Carbide Schottky diode from STMicroelectronics, housed in a through-hole TO-220AC package. Its key advantage over conventional silicon ultrafast diodes is the zero reverse recovery time (trr = 0 ns), which eliminates the reverse-recovery charge that causes switching losses and ringing in hard-switched converters.
650 V blocking with 175 °C junction — margin for the power stage
The 650 V reverse voltage rating provides adequate derating for a 400 Vdc PFC bus (typical 1.5× margin) and covers universal AC input (90-265 Vac) with surge. The 10 A average forward current is specified at a case temperature that depends on the thermal design; with the 1.75 V forward voltage at 10 A, the conduction loss is 17.5 W, so the TO-220 tab must be bolted to a heatsink with low thermal resistance.
The 0 ns reverse recovery time is not a marketing number; it is intrinsic to the SiC Schottky barrier — there is no minority carrier storage to sweep out. In a continuous-conduction-mode (CCM) PFC, this eliminates the reverse-recovery current spike that would otherwise add several amperes of peak current stress on the MOSFET and force a slower turn-on dv/dt. The result is lower EMI, reduced MOSFET switching loss, and the ability to push the switching frequency above 100 kHz without sacrificing efficiency. The 480 pF junction capacitance at 0 V is comparable to a silicon ultrafast of the same current rating, so the capacitive turn-on loss is not a penalty.
It is a current-production part, not subject to a last-time-buy or end-of-life notice. This removes supply-chain risk for new designs and production ramps.