Zero recovery time — what it does for the power stage
The STPSC10H065B-TR is a 650V, 10A SiC Schottky diode from STMicroelectronics. Its defining characteristic is zero reverse recovery time (trr = 0 ns) at currents above 500 mA, which means the diode contributes no switching loss during hard commutation. In a continuous-conduction-mode PFC stage or a phase-shifted full-bridge converter, that zero trr eliminates the reverse-recovery spike that forces higher-voltage MOSFETs and larger snubbers.
650V / 10A — where the rating lands
Rated 650V reverse voltage and 10A average forward current (Io), with a maximum forward voltage of 1.75V at 10A and 25°C junction. The 480 pF capacitance at 0V bias is typical for a 10A SiC Schottky; it determines the capacitive switching loss at high frequency. The 100 µA reverse leakage at 650V is a room-temperature figure — expect it to rise with temperature, but SiC leakage stays well below silicon Schottky levels at high Tj.
175°C junction — thermal headroom for dense layouts
In a DPAK package, the thermal resistance to ambient depends heavily on the PCB copper area on the drain tab; a 1 oz copper pour of 1–2 in² typically keeps Tj below 150°C at 10A continuous in still air.
DPAK — the assembly reality
Surface-mount in a TO-252 (DPAK) package, with two leads plus the tab. The tab is the cathode and carries the main thermal path; the DPAK footprint is standard and reflow-compatible with lead-free profiles.
STMicroelectronics lists the STPSC10H065B-TR as Active. ROHS3 compliant — no lead, no restricted substances under the current directive.