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STMicroelectronics STPSC10C065RY — Discrete Semiconductors

STPSC10C065RY SiC Schottky Diode, 650V 10A, AEC-Q101

MPNSTPSC10C065RY
Obsolete

STMicroelectronics STPSC10C065RY, Automotive AEC-Q101 SiC Schottky diode, 650V reverse voltage, 10A average rectified current, zero reverse recovery time, TO-262-3 (I2PAK) through-hole package.

$3.8700Ref. price · indicative, final on quote
PackagingTO-262-3 Long Leads, I²Pak, TO-262AA
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STPSC10C065RY specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Current - reverse leakage @ vr100 µA @ 650 V
Current - average rectified10A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
QualificationAEC-Q101
CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Capacitance @ vr,480pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

The STPSC10C065RY is a silicon carbide Schottky diode rated for 650 V reverse voltage and 10 A average rectified current, housed in a through-hole TO-262-3 (I2PAK) package.

No official successor part is listed on the lifecycle record. For new production or repair, the part must be sourced through independent distribution — surplus stock, broker inventory, or last-time-buy leftovers already in the channel. The 480 pF capacitance at 0 V and 1 MHz is typical for a 10 A SiC Schottky — expect the junction capacitance to drop as reverse voltage increases, which helps maintain efficiency in light-load conditions.

Reverse leakage at 650 V — the thermal budget driver

Reverse leakage is specified at 100 µA at 650 V.

Frequently asked questions

Is STPSC10C065RY AEC-Q101 qualified?

Yes, it carries AEC-Q101 qualification, confirming it meets automotive-grade stress and reliability requirements for use in ECU, PFC, and on-board charger applications.