For new designs, consider the current-generation SiC Schottky diodes from ST's portfolio; for BOM fills, we source this exact code through our independent distribution network, verified against counterfeits, and quote it against an RFQ.
SiC Schottky — zero reverse recovery is the headline
This is a silicon-carbide Schottky diode rated for 600 V DC reverse voltage and 10 A average rectified current, housed in a D²PAK surface-mount package. The defining characteristic is zero reverse recovery time — the SiC Schottky barrier eliminates the stored-charge tail that plagues silicon ultrafast diodes. In a 100 kHz PFC or LLC converter, that zero trr translates directly to lower switching losses and reduced EMI, because there is no reverse-recovery current spike for the MOSFET to commutate. The 650 pF capacitance at 0 V is low enough to keep capacitive turn-on losses modest at high frequency.
The 600 V blocking voltage provides margin for 400 V bus applications, including power-factor-correction stages in server and telecom supplies. The 10 A average current is the thermal limit at a 175°C junction temperature — derating applies in practice, but the SiC die can sustain high current density. Forward voltage is 1.7 V at 10 A, a typical figure for a 600 V SiC Schottky of this die size; the positive temperature coefficient helps with current sharing if paralleled. Reverse leakage at 600 V is 150 µA, which is low for a SiC device and keeps standby losses in check.
The D²PAK (TO-263AB) package has a large exposed metal tab on the bottom for heat sinking through the PCB.