SiC Schottky that handles the under-hood thermal budget
The STPSC10065GY-TR is an automotive-grade silicon carbide Schottky diode from STMicroelectronics, rated for 650 V reverse voltage and 10 A average rectified current. It carries AEC-Q101 qualification and a 175°C maximum junction temperature, placing it squarely in the under-hood power-conversion domain — PFC stages, DC-DC converters, and EV/HEV on-board chargers where silicon diodes hit their reverse-recovery ceiling. The zero reverse recovery time (trr = 0 ns) eliminates the switching loss term that dominates silicon ultrafast rectifiers above 100 kHz. At 10 A forward, the maximum forward voltage is 1.45 V, and the 670 pF junction capacitance at 0 V keeps the capacitive switching loss manageable in hard-switched topologies.
D²PAK footprint and surface-mount assembly
Supplied in a TO-263-3 (D²PAK) surface-mount package, the STPSC10065GY-TR uses the large exposed tab for both electrical connection and heat sinking. For 10 A continuous, a 2 oz copper pour of at least 600 mm² on the top layer is typical to keep the junction below 125°C in a 85°C ambient. The base product number is STPSC10065; the GY suffix identifies the automotive-grade AEC-Q101 variant with the 175°C junction rating.
Active production, no obsolescence watch needed
Reverse leakage at rated voltage is 130 µA at 650 V, typical for a 10 A SiC Schottky. The ECOPACK®2 designation means the part is halogen-free and meets the RoHS and REACH requirements for automotive supply chains.