SiC Schottky — zero-recovery switching at 650 V, 10 A
The STPSC10065G2-TR is a silicon carbide Schottky diode from STMicroelectronics' ECOPACK®2 series, rated for 650 V reverse voltage and 10 A average rectified current in a D2PAK surface-mount package. Its zero reverse recovery time (0 ns trr) eliminates the switching losses that plague ultrafast silicon diodes in hard-switched PFC, boost, and flyback stages.
Forward drop and leakage at temperature
Maximum forward voltage is 1.45 V at 10 A — the conduction loss floor at rated current. Reverse leakage is 130 µA at 650 V, a figure that rises with junction temperature; the 175°C rating means the leakage thermal budget must be checked at the actual operating point. Junction capacitance is 670 pF at 0 V, 1 MHz — low enough to keep capacitive switching losses manageable in the 100 kHz+ range.
Active production, D2PAK footprint
ROHS3 compliant and part of the ECOPACK®2 series — no material restrictions for EU or global markets.