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STMicroelectronics STPSC10065DY — Discrete Semiconductors

STPSC10065DY SiC Schottky Diode, 650V 10A, TO-220AC

MPNSTPSC10065DY
Active

STMicroelectronics STPSC10065DY, ECOPACK®2 series, Silicon Carbide Schottky Diode, 650 V, 10 A, TO-220AC, Through Hole, Tube, AEC-Q101 Automotive Grade.

$3.9100Ref. price · indicative, final on quote
STMicroelectronics STPSC10065DY datasheet (PDF)
PackagingTO-220-2
RoHSROHS3 Compliant
SeriesECOPACK®2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC10065DY specifications
ParameterValue
SeriesECOPACK®2
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 10 A
Current - reverse leakage @ vr130 µA @ 650 V
Current - average rectified10A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
QualificationAEC-Q101
CaseTO-220-2
Capacitance @ vr,670pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

SiC Schottky — zero recovery, 650 V, 10 A, automotive-qualified

The STPSC10065DY is a 650 V, 10 A average-rated Silicon Carbide Schottky diode from STMicroelectronics, housed in a TO-220AC through-hole package.

AEC-Q101 and 175°C junction — built for under-hood duty

Grade Automotive and AEC-Q101 qualification mean this diode has passed the stress tests for engine-bay and transmission-mounted electronics: temperature cycling, HTRB (high-temperature reverse bias), and ESD robustness per the automotive discrete standard. The 175°C maximum junction temperature gives headroom in a 105°C ambient environment with self-heating from conduction and switching losses. The TO-220AC package has a metal tab that connects to the cathode — the same as the centre pin. The 670 pF junction capacitance at 0 V bias means the diode's output capacitance will resonate with the circuit's stray inductance during the off-state — keep the loop tight to avoid ringing that eats into the 650 V voltage margin.

Active production, ROHS3, sourced per RFQ

Sourcing is handled through independent and authorized distribution channels.

Frequently asked questions

What is the difference between STPSC10065DY and STPSC10065D?

The STPSC10065D is the same 650 V, 10 A SiC Schottky die in the same TO-220AC package but without the AEC-Q101 automotive qualification. The STPSC10065DY carries Grade Automotive and the full AEC-Q101 stress test suite. For an automotive BOM line, the DY suffix is the correct choice; for industrial or consumer PFC, the D variant may be acceptable if the procurement spec allows non-automotive parts.

Does STPSC10065DY have zero reverse recovery time?

Yes. The datasheet lists trr = 0 ns. Silicon Carbide Schottky diodes are majority-carrier devices — there is no stored minority charge to sweep out, so the reverse recovery current is essentially the junction capacitance charging current. This eliminates the turn-on loss spike in the switching transistor and reduces conducted EMI compared to any silicon ultrafast or hyperfast diode.

What is the maximum junction temperature for STPSC10065DY?

The operating junction temperature range is -40°C to 175°C. The 175°C maximum is the absolute limit — the forward drop and leakage current both increase with temperature, so the thermal design must keep the junction below this at full load and worst-case ambient. The AEC-Q101 qualification includes high-temperature reverse bias testing at or near this limit.