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STMicroelectronics STPSC10065DLF — Discrete Semiconductors

STPSC10065DLF SiC Schottky Diode, 650 V, 10 A, PowerFlat

MPNSTPSC10065DLF
Active

STMicroelectronics STPSC10065DLF, ECOPACK®2 series, Silicon Carbide Schottky diode, 650 V reverse, 10 A average rectified, zero reverse recovery, PowerFlat™ (8x8) HV surface-mount package, -40°C to 175°C junction temperature.

$4.0100Ref. price · indicative, final on quote
Packaging8-PowerVDFN
SeriesECOPACK®2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPSC10065DLF specifications
ParameterValue
SeriesECOPACK®2
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 10 A
Current - reverse leakage @ vr130 mA @ 650 V
Current - average rectified10A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerVDFN
Capacitance @ vr,670pF @ 0V, 1MHz
Reverse recovery time0 ns

Product details

Zero reverse recovery — what it buys the switching stage

The STPSC10065DLF is a 650 V, 10 A Silicon Carbide Schottky diode from STMicroelectronics, part of the ECOPACK®2 series. In a hard-switched PFC or flyback converter, that eliminates the turn-on loss spike that a standard ultrafast diode would cause in the MOSFET, so the switching stage runs cooler and the EMI signature is cleaner.

10 A, 650 V — the power envelope

Rated for 10 A continuous average forward current and 650 V reverse voltage, this diode fits boost, PFC, and flyback stages in supplies up to a few kilowatts. The forward voltage drop is 1.45 V max at 10 A, which sets the conduction loss floor.

PowerFlat 8x8 — rework and thermal handling

The 8x8 mm body is large enough to hand-rework with a hot-air station — the pad is visible and the part has a clear orientation mark — but the thermal pad demands a good solder joint; a void under the die will push junction temperature above the 175 °C limit under load.

Frequently asked questions

What is the zero-recovery-time spec for STPSC10065DLF?

The datasheet lists a reverse recovery time of 0 ns, with no recovery time for currents above 500 mA. This is inherent to the Silicon Carbide Schottky structure — there is no minority carrier storage, so the diode turns off instantly without a reverse-recovery current spike.