SiC Schottky — no recovery tail to design around
The STPSC10065D is a silicon carbide Schottky diode from STMicroelectronics, rated 650 V reverse voltage and 10 A average rectified current. That eliminates the switching loss spike that standard ultrafast diodes leave in the circuit. In a PFC boost stage or a high-frequency DC-DC converter, the zero-recovery characteristic means the MOSFET or IGBT switching alongside it sees no reverse-recovery current surge. The heatsink and the EMI filter both run cooler as a result.
650 V blocking, 10 A forward — the thermal budget
Forward voltage is 1.45 V maximum at 10 A and 25 °C junction. At that current the conduction loss is about 14.5 W — the TO-220AC package with a properly sized heatsink keeps the junction below the 175 °C maximum operating temperature. Reverse leakage is 130 µA at the full 650 V blocking voltage. That leakage doubles or triples as the junction approaches 175 °C, so the thermal design needs margin at the high end of the operating range. Capacitance at the output node is 670 pF at zero bias — the junction capacitance drops as reverse voltage increases, which helps keep the switching node capacitance manageable in a hard-switched topology.
Through-hole mounting, active production
It ships in the TO-220-2 through-hole package — the same footprint as standard TO-220AC diodes, so it drops into existing PCB layouts without a board spin. RoHS3 compliant and part of the ECOPACK®2 series, which means the mould compound and plating meet the current EU restriction limits. No special handling or lead-free process change required.