STPS8170DEE-TR

STMicroelectronics

STMicroelectronics STPS8170DEE-TR, Schottky Diode, 170 V DC Reverse, 8 A Average Rectified, 900 mV Forward Voltage at 8 A, 15 µA Reverse Leakage, 175°C Junction, PowerFlat 3.3x3.3, Surface Mount, Tape & Reel.

STMicroelectronics STPS8170DEE-TR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STPS8170DEE-TR specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)170 V
Voltage - forward (Vf) (Max) @ if900 mV @ 8 A
Current - reverse leakage @ vr15 µA @ 170 V
Current - average rectified8A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerTDFN

Technical details

170 V, 8 A — where this Schottky sits in the power chain

The STPS8170DEE-TR is a 170 V, 8 A Schottky rectifier in ST's PowerFlat 3.3x3.3 surface-mount package. That 170 V reverse rating puts it into the 48–72 V bus converter space and PFC boost stages where a standard 100 V Schottky would leave no headroom for transients. The 8 A average forward current is continuous-rated, not surge — the die is sized for steady-state conduction in a 175°C junction environment.

At 8 A the forward voltage is 900 mV max — higher than a low-Vf 100 V Schottky, but that is the price of 170 V blocking. The reverse leakage at rated voltage is 15 µA, which at 175°C junction climbs significantly (the datasheet curve shows the typical rise).

Package and mounting — PowerFlat 3.3x3.3

The 8-PowerTDFN package (ST calls it PowerFlat 3.3x3.3) is a leadless surface-mount with an exposed die pad on the bottom. The pad carries the cathode current and is the primary thermal path — the PCB land pattern must match the recommended footprint in the datasheet, with thermal vias to an inner-layer copper pour.

ROHS3 compliant. No official second-source or cross-reference is listed; the part is sole-sourced to ST.

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