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STMicroelectronics STPS3150RL — Discrete Semiconductors

STPS3150RL Schottky Diode, 150 V, 3 A, DO-201AD

MPNSTPS3150RL
Active

STMicroelectronics STPS3150RL Schottky diode, 150 V reverse voltage, 3 A average rectified current, 820 mV forward voltage at 3 A, DO-201AD axial package, fast recovery ≤ 500 ns.

$0.6500Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPS3150RL specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)150 V
Voltage - forward (Vf) (Max) @ if820 mV @ 3 A
Current - reverse leakage @ vr2 µA @ 150 V
Current - average rectified3A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologySchottky
CaseDO-201AD, Axial

Product details

150 V, 3 A Schottky in a DO-201AD axial package

The STPS3150RL is a 150 V, 3 A Schottky rectifier from STMicroelectronics in the DO-201AD axial-lead package. It is designed for low-voltage, high-frequency rectification in switch-mode power supplies, freewheeling diodes, and polarity protection circuits where the Schottky's low forward voltage drop and fast switching reduce losses.

820 mV forward drop at rated current

Forward voltage is specified at 820 mV maximum at 3 A forward current. For a 3 A load, this sets the conduction loss floor at roughly 2.5 W — the DO-201AD package's thermal impedance to ambient must be factored into the heatsinking or PCB copper area to keep the junction below the 175 °C maximum. Reverse leakage is 2 µA at 150 V reverse voltage, typical for a 150 V Schottky. Leakage rises with junction temperature, so the thermal design should account for the leakage contribution at the operating temperature.

It is ROHS3 compliant, with no exemptions that would complicate EU or global regulatory acceptance.

Frequently asked questions

Is STPS3150RL a fast recovery diode?

It is a Schottky diode, which inherently switches faster than a standard or fast-recovery pn-junction diode. The listed speed is Fast Recovery ≤ 500 ns at > 200 mA, but Schottky recovery is typically in the tens of nanoseconds — the 500 ns bound is a conservative spec for the test condition.