Automotive Schottky pair rated to 175°C junction
The 600 mV maximum forward voltage at 10 A sets the conduction loss floor, while the 350 µA reverse leakage at 60 V defines the off-state power dissipation.
Conduction loss and thermal budget
At 10 A forward current the 600 mV Vf produces 6 W conduction loss per diode. Reverse leakage of 350 µA at 60 V contributes negligible static loss, but note that Schottky leakage doubles with every 10°C rise — at 150°C junction the actual leakage may exceed the 25°C spec by an order of magnitude, shifting the thermal balance in high-temperature soak conditions.
It is ROHS3 compliant and qualified to AEC-Q101, so the PPAP documentation required for automotive program release is available from STMicroelectronics.
