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STMicroelectronics STPS1H100AFN — Discrete Semiconductors

STPS1H100AFN Schottky Diode, 100V 1A, Fast Recovery

MPNSTPS1H100AFN
Obsolete

STMicroelectronics STPS1H100AFN Schottky diode, 100 V reverse voltage, 1 A average rectified current, 770 mV forward drop at 1 A, 4 µA reverse leakage, Fast Recovery ≤ 500 ns, 175°C junction temperature, DO-221AC SMA Flat Leads package, surface mount.

$0.3600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STPS1H100AFN specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if770 mV @ 1 A
Current - reverse leakage @ vr4 µA @ 100 V
Current - average rectified1A
Operating temperature - junction175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-221AC, SMA Flat Leads

Product details

100 V, 1 A Schottky — switching-loss profile

The STPS1H100AFN is a 100 V, 1 A Schottky rectifier from STMicroelectronics in the DO-221AC SMA Flat Leads package. It delivers a forward voltage of 770 mV at 1 A and a reverse leakage of 4 µA at 100 V, with a 175°C maximum junction temperature. The Fast Recovery characteristic (≤ 500 ns, > 200 mA) makes it suited for high-frequency rectification and freewheeling in power supplies where switching losses matter, though the 770 mV Vf is higher than a typical low-Vf Schottky — the trade-off buys better high-temperature leakage control.

Obsolete — no official successor listed

ST lists the STPS1H100AFN as Obsolete. The SMA Flat Leads footprint is shared with other ST Schottky diodes in the STPS1H100 family; a parametric search across 100 V, 1 A Schottkys in the same package will identify functional equivalents for cross-sourcing.

175°C junction — hot-environment margin

Rated for a 175°C maximum junction temperature, this diode can operate in high-ambient environments such as under-hood automotive, industrial PSU secondary rectification, or sealed power modules where the board temperature exceeds 125°C. The 4 µA leakage at 100 V is specified at 25°C; expect it to multiply with temperature, but the 175°C rating gives thermal headroom for derating the 1 A average current in forced-convection or liquid-cooled designs.

Frequently asked questions

Is the STPS1H100AFN obsolete?

Yes, STMicroelectronics lists the STPS1H100AFN as Obsolete.

What is the replacement for STPS1H100AFN?

ST does not list a direct successor for the STPS1H100AFN. For a functional equivalent, search for 100 V, 1 A Schottky diodes in the DO-221AC SMA Flat Leads package from other manufacturers; the footprint and key ratings (100 V, 1 A, 770 mV Vf, 175°C Tj) define the replacement criteria.

What are the specifications of STPS1H100AFN?

100 V reverse voltage, 1 A average rectified current, 770 mV forward voltage at 1 A, 4 µA reverse leakage at 100 V, Fast Recovery ≤ 500 ns (> 200 mA), 175°C junction temperature, DO-221AC SMA Flat Leads package, surface mount.