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STMicroelectronics STPS15H100CH — Discrete Semiconductors

STPS15H100CH Schottky Diode, 100 V, 7.5 A, I-PAK, Obsolete

MPNSTPS15H100CH
Obsolete

STMicroelectronics STPS15H100CH, Schottky diode, 1 pair common cathode, 100 V Vr, 7.5 A average rectified per diode, 800 mV Vf at 7.5 A, I-PAK through-hole package, fast recovery ≤ 500 ns.

STMicroelectronics STPS15H100CH datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STPS15H100CH specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if800 mV @ 7.5 A
Current - reverse leakage @ vr3 µA @ 100 V
Current - average rectified (Io) (per diode)7.5A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-251-3 Short Leads, IPak, TO-251AA
Diode configuration1 Pair Common Cathode

Product details

Obsolete — plan the BOM move now

The STPS15H100CH is listed as obsolete.

7.5 A per diode, 800 mV Vf — the conduction loss floor

Each diode in the common-cathode pair handles 7.5 A average rectified current. At that current the forward voltage drop is 800 mV max. Reverse leakage is 3 µA at 100 V. The 175°C maximum junction rating is the upper limit.

I-PAK through-hole — mechanical constraint for any swap

The I-PAK through-hole package and three-lead common-cathode pinout mean a single Schottky or a different dual-diode package won't drop in without a board spin.

Frequently asked questions

What is a suitable replacement for STPS15H100CH?

No official successor is listed. A functionally similar dual Schottky in the same I-PAK package with a 100 V, 7.5 A per-diode rating would be the closest match, but the pinout and thermal pad must be verified against the board layout. No drop-in replacement is guaranteed without evaluation.

What are the electrical specifications of STPS15H100CH?

It is a dual common-cathode Schottky rectifier rated 100 V reverse voltage, 7.5 A average rectified current per diode, 800 mV forward voltage max at 7.5 A, 3 µA reverse leakage at 100 V, and a 175°C maximum junction temperature. Recovery is fast — ≤ 500 ns.