Skip to main content
Log in
STMicroelectronics STP9NM60N — Discrete Semiconductors

STP9NM60N N-Channel MOSFET, 600 V, 6.5 A, MDmesh II

MPNSTP9NM60N
NRND

STMicroelectronics STP9NM60N, MDmesh™ II N-Channel MOSFET, 600 V Vdss, 6.5 A Id, 745 mOhm Rds(on) at 10 V, TO-220-3 through-hole, ±25 V Vgs max, 17.4 nC gate charge, 452 pF input capacitance.

$2.7200Ref. price · indicative, final on quote
STMicroelectronics STP9NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP9NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.5A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs745mOhm @ 3.25A, 10V
Gate charge (Qg) (Max) @ vgs17.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds452 pF @ 50 V

Product details

600 V N-channel in TO-220 — MDmesh II generation

The 745 mOhm maximum on-resistance at 3.25 A with 10 V gate drive places it in the mid-Rds(on) tier for this voltage class — a reasonable fit for offline flyback primary switches, PFC boost stages, and auxiliary power supplies where the DC bus sits at 400 V and needs derating headroom. The TO-220-3 through-hole package allows direct heatsink mounting with the tab soldered to a copper island or bolted to a chassis.

Total gate charge is 17.4 nC at 10 V, and input capacitance measures 452 pF at 50 V drain-source. These numbers indicate a moderate switching speed — the gate driver sees a manageable capacitive load, so a standard bootstrap or transformer-coupled gate drive circuit works without special high-current buffers. The 4 V threshold at 250 µA drain current means logic-level drive at 5 V may be marginal; 10 V drive is specified for the rated Rds(on) and is the safe choice for full enhancement.

NRND — plan for a replacement

This is not an immediate EOL, but the part is no longer the recommended choice for new projects. Production continues for existing designs, but future availability will tighten. For new BOMs, evaluate a pin-compatible MDmesh II or MDmesh V alternative in the same TO-220 footprint. The 600 V, 6.5 A, 745 mOhm operating point guides the selection — a lower Rds(on) part at similar voltage and current rating will drop in with a gate drive adjustment.

Frequently asked questions

What is the STP9NM60N replacement?

STMicroelectronics has not published a direct successor order code for the STP9NM60N. A pin-compatible replacement should be a 600 V N-channel MOSFET in TO-220 with drain current rating of at least 6.5 A and on-resistance at or below 745 mOhm at 10 V gate drive. Candidates from ST's MDmesh V series or equivalent offerings from Infineon (CoolMOS) or Onsemi will fit the footprint, but verify gate charge and threshold voltage against the existing gate drive design.