500 V MDmesh™ N-channel — what it was built for
It was designed for hard-switching topologies in off-line power supplies, adapters, and lighting ballasts where 500 V blocking and moderate current handling are the fit criteria.
No last-time-buy window or successor part number is recorded in the official lifecycle data. The 500 V, 5 A, TO-220 N-channel MOSFET space is densely populated; any substitute must match the gate threshold voltage (4 V max at 250 µA) and the 10 V drive voltage for rated Rds(on) to avoid re-characterising the gate drive circuit.
Ratings that decide the fit
The 500 V Vdss sets the maximum DC bus voltage it can block — 400 V nominal PFC rails or 310 V rectified mains are within margin, but 600 V bus designs need a higher-rated device. The 5 A continuous drain at 25°C case temperature is the thermal limit; at elevated case temperatures the current must be derated per the datasheet curve. The 560 mOhm Rds(on) at 10 V gate drive determines conduction loss — at 3.7 A the dissipation is about 7.7 W, which the 70 W maximum power dissipation can handle with a properly sized heatsink. Gate charge of 20 nC at 10 V is modest, keeping drive losses low in switching applications up to the 100 kHz range.
Package and mounting — no reflow surprises
There is no moisture sensitivity level concern — through-hole parts are not reflow-soldered, so no bake-before-place step is needed. The mounting hole and lead spacing match industry-standard TO-220 footprints.