STMicroelectronics SuperMESH™ N-channel MOSFET, STP9NK90Z, 900 V drain-source, 8 A continuous drain, 1.3 Ohm Rds(on) at 10 V, 72 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.3Ohm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 72 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2115 pF @ 25 V |
Input capacitance is 2115 pF at 25 V drain-source, which together with the gate charge gives a reasonable switching speed for a 900 V device in flyback and PFC topologies.
Gate-source voltage is clamped at ±30 V maximum, so standard 10 V or 12 V gate drive levels are safe.
The base product number is STP9NK90, with the 'Z' suffix indicating the SuperMESH generation.
The STP9NK90Z is the SuperMESH generation variant of the base STP9NK90. It is a direct functional replacement with improved switching performance — the 'Z' suffix denotes the SuperMESH technology. Pin-compatible in the same TO-220 package.
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