STMicroelectronics SuperMESH™ N-Channel MOSFET, STP9NK70Z, 700V Vdss, 7.5A Id, 1.2Ω Rds(on) at 10V, TO-220-3, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 700 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.5A (Tc) |
| Power dissipation | 115W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1370 pF @ 25 V |
Housed in a through-hole TO-220-3 package, the STP9NK70Z is designed for PCB mounting with a metal tab that can be bolted to a heatsink. The supplier device package is TO-220. The tab is electrically connected to the drain, so an insulating pad or thermal interface material is needed if the heatsink is grounded.
The maximum on-resistance is 1.2 Ω at a drain current of 4 A and a gate-to-source voltage of 10 V.