650 V N-channel MOSFET for offline power conversion
The 1.2 Ohm maximum Rds(on) at 10 V gate drive defines the conduction loss for a given load current, and the 125 W power dissipation ceiling in the TO-220 package sets the thermal budget for heatsink selection.
Gate drive and switching behaviour
Gate charge is 41 nC at 10 V, a moderate figure that a standard PWM controller or driver IC can handle without excessive drive losses. Input capacitance measures 1145 pF at 25 V drain-source, which influences the switching speed and the gate-driver's peak current requirement. For designs targeting hard-switched topologies above 100 kHz, the gate charge and capacitance numbers should be factored into the driver selection and dead-time calculation.
The TO-220 through-hole package suits designs where a heatsink is bolted to the tab for thermal management; the package's lead form is compatible with standard PCB layouts and chassis-mount approaches.
For volume commitments or dual-source qualification, the base product number STP9NK65 covers the family, and the Z suffix denotes the SuperMESH™ generation.
