Skip to main content
Log in
STMicroelectronics STP9NK60ZFP — Discrete Semiconductors

STP9NK60ZFP N-Channel MOSFET, 600 V, 7 A, SuperMESH™

MPNSTP9NK60ZFP
Active

STMicroelectronics STP9NK60ZFP N-Channel SuperMESH™ MOSFET, 600 V Vdss, 7 A Id, 950 mOhm Rds(on) at 10 V, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature, Active.

$1.5700Ref. price · indicative, final on quote
STMicroelectronics STP9NK60ZFP datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP9NK60ZFP specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1110 pF @ 25 V

Product details

600 V, 7 A N-channel in a full-pack TO-220

On-resistance and gate charge — the switching loss trade-off

950 mOhm Rds(on) at 10 V and 53 nC total gate charge. 1110 pF input capacitance at 25 V drain-source.

Junction temperature range and package thermal limits

The TO-220FP package dissipates up to 30 W at the case; in practice, the full-pack construction increases thermal resistance compared to a standard TO-220, so the designer should budget a larger heatsink or forced airflow when operating near the 7 A continuous drain current at elevated ambient.

Frequently asked questions

What is the difference between STP9NK60ZFP and STP9NK60ZP?

The STP9NK60ZFP uses the TO-220FP full-pack package (fully isolated tab), while the STP9NK60ZP uses a standard TO-220 package (metal tab electrically connected to drain). The electrical ratings — 600 V Vdss, 7 A Id, 950 mOhm Rds(on) — are identical. Choose the ZFP variant when you want to avoid an insulating pad between the device and the heatsink.