STP9NK60Z

STMicroelectronics

STMicroelectronics SuperMESH™ N-channel MOSFET, STP9NK60Z, 600 V Vdss, 7 A Id, 950 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

STMicroelectronics STP9NK60Z
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[IN STOCK] In Stock: 4 pcs
$6.73/ pc

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Technical specifications

STP9NK60Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1110 pF @ 25 V

Technical details

600 V blocking, 7 A continuous — the power-switch spec that matters

The STP9NK60Z: 600 V drain-to-source blocking and 7 A continuous drain current suit offline flyback converters and PFC boost stages.

Total gate charge is 53 nC at 10 V.

Through-hole TO-220 — the repair-bench favourite

The STP9NK60Z comes in a TO-220-3 through-hole package — the same footprint that's been a staple on power boards for decades. For the board-level repair tech, that means a clean desolder-and-replace job with a standard iron and a solder sucker; no hot-air rework station needed. The tab is the drain, so the heatsink pad in the layout must be isolated or tied to the drain rail. Maximum power dissipation is 125 W at the case, but that's at 25°C case — real-world derating means a heatsink sized for the actual dissipation, not the datasheet ceiling.

For the BOM cost engineer, that means no single-source risk from obsolescence on this line. The base product number is STP9NK60, so any suffix variants (Z, FP, etc.) share the same die platform; the Z suffix indicates the SuperMESH™ generation.

STP9NK60Z
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