STMicroelectronics STP9NK50ZFP, SuperMESH™ N-channel MOSFET, 500 V drain-source, 7.2 A continuous drain, 850 mOhm Rds(on), 32 nC gate charge, TO-220FP through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.2A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 850mOhm @ 3.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 910 pF @ 25 V |
This voltage class targets offline flyback converters, PFC stages, and auxiliary power supplies where the primary switch sees rectified mains. Gate charge totals 32 nC at 10 V, which sets the driver current needed for the target switching frequency: a 32 nC gate switched at 100 kHz draws 3.2 mA average from the driver, well within the capability of most standard MOSFET gate-drive ICs.
The supplier device code is TO-220FP.
ROHS3 compliant.
This value is specified at 25 °C junction; actual Rds(on) increases with temperature per the normalised curve in the datasheet.
The TO-220FP (full-pack) package has the same 2.54 mm pitch and 0.60 mm pin diameter as standard TO-220, but the body is wider and the tab is fully moulded. It fits the same hole pattern on the PCB but requires a different heatsink interface — no metal tab contact, so the heatsink mounts against the plastic face.