STMicroelectronics MDmesh™ K5 series, STP9N80K5, N-Channel MOSFET, 800 V Vdss, 7 A Id, 900 mOhm Rds(on) @ 3.5 A, 10 V, 12 nC Qg, TO-220-3 through-hole package, -55 to 150 °C junction range.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 100 V |
With a typical gate charge of 12 nC at 10 V, the STP9N80K5 requires relatively little drive energy to switch, which reduces gate-driver power dissipation and allows higher switching frequencies in compact SMPS designs. This combination suits resonant and quasi-resonant topologies where switching losses dominate.
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