STMicroelectronics STP9N60M2, MDmesh™ II Plus N-Channel MOSFET, 600 V Vdss, 5.5 A Id, 780 mOhm Rds(on) at 10 V, 10 nC Qg, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5.5A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 780mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 320 pF @ 100 V |
The STP9N60M2: The TO-220-3 through-hole package suits designs that already use a heatsink — the tab is the drain, so the mounting hole and pad carry the thermal path to the ambient.
The 780 mOhm RDS(on) is specified at 3 A, 10 V.
The maximum RDS(on) is 780 mOhm at a drain current of 3 A with a 10 V gate-to-source drive.