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STMicroelectronics STP95N2LH5 — Discrete Semiconductors

STP95N2LH5 N-Channel MOSFET, 25V, 80A, TO-220, Obsolete

MPNSTP95N2LH5
Obsolete

STMicroelectronics STripFET™ V series STP95N2LH5 N-Channel MOSFET, 25V Vdss, 80A Id, 4.9mOhm Rds(on) at 40A/10V, TO-220-3, -55°C to 175°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP95N2LH5 specifications
ParameterValue
SeriesSTripFET™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation80W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±22V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs4.9mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs13.4 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1817 pF @ 25 V

Product details

The STP95N2LH5 is an N-Channel MOSFET from STMicroelectronics' STripFET™ V series, housed in a through-hole TO-220-3 package. The device is designed for low-voltage, high-current switching applications such as DC-DC converters, load switches, and motor-drive output stages, where conduction loss and thermal performance are critical.

The 13.4 nC typical gate charge at 5 V means the gate-drive energy per switching cycle is low, keeping driver losses in check even at moderate frequencies. The drive voltage range of 5 V to 10 V allows use with both 5 V logic-level gate signals and standard 10 V gate drives, but the Rds(on) at 5 V will be higher than the 4.9 mOhm figure quoted at 10 V — check the typical output characteristics in the datasheet to size the heatsink for the actual gate voltage in your design.

Obsolete — sourcing and lifecycle reality

Frequently asked questions

Is STP95N2LH5 obsolete?

Yes, STMicroelectronics lists the STP95N2LH5 as Obsolete. There is no official replacement order code in the lifecycle record.