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STMicroelectronics STP95N04 — Discrete Semiconductors

STP95N04 N-Channel MOSFET, 40V 80A TO-220, Obsolete

MPNSTP95N04
Obsolete

STMicroelectronics STripFET™ STP95N04, N-Channel MOSFET, 40 V drain-source, 80 A continuous drain, 6.5 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55 to 175 °C junction.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP95N04 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V

Product details

40 V, 80 A, 6.5 mΩ — a TO-220 switching workhorse, now obsolete

The STMicroelectronics STP95N04 is an N-channel STripFET™ power MOSFET in a through-hole TO-220-3 package. Gate charge is 54 nC at 10 V, and input capacitance measures 2200 pF at 25 V drain-source — numbers that matter for estimating switching losses and driver sizing in a 12 V or 24 V automotive or industrial power stage.

For a BOM that already uses this part, the procurement path is the independent distribution channel — surplus, new-old-stock, or broker-sourced inventory. Any buy should include a visual inspection and parametric verification, especially on date codes more than a few years old.

That is the drive voltage you need to hit the lowest Rds(on) — the part is not characterised at 4.5 V or 5 V logic levels, so a 10 V gate drive rail (or a gate driver that can deliver it) is assumed. The 54 nC total gate charge at 10 V gives a rough switching-energy figure: at moderate frequencies (20–50 kHz) the gate-drive loss is manageable; above 100 kHz the 2200 pF input capacitance starts to eat into efficiency, and a lower-Qg part might be a better fit. For a 40 A continuous rating, the 110 W maximum power dissipation at the case (Tc) means a decent heatsink is non-negotiable — the TO-220 tab needs a thermal interface to anything above a few amps.

Frequently asked questions

What is the replacement for STP95N04?

No official replacement is listed in the record. For a new design, look for a current-production N-channel MOSFET in TO-220 with 40 V Vdss, 80 A Id, and ≤6.5 mΩ Rds(on) at 10 V. For a drop-in on an existing board, verify pinout and footprint against any candidate — the TO-220 pinout is standard, but gate threshold and drive voltage must match your circuit.

Can the STP95N04 handle 40 A continuous?

Yes, the continuous drain current is rated at 80 A at 25 °C case temperature. At 40 A you are operating at half the rated current, well within the safe operating area — provided the case temperature is kept under control with adequate heatsinking. The 110 W maximum dissipation at the case is the thermal limit to watch.

What is the Rds(on) of STP95N04?

The maximum Rds(on) is 6.5 mΩ at 40 A drain current with 10 V gate-source voltage. That is the spec you design to for conduction losses.