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STMicroelectronics STP90N6F6 — Discrete Semiconductors

STP90N6F6 N-Channel MOSFET, 60 V, 84 A, 6.8 mΩ, TO-220

MPNSTP90N6F6
Obsolete

STMicroelectronics STP90N6F6, DeepGATE™ STripFET™ VI, N-Channel MOSFET, 60 V Vdss, 84 A Id, 6.8 mOhm Rds(on), 74.9 nC Qg, TO-220-3, Through Hole.

$1.5300Ref. price · indicative, final on quote
STMicroelectronics STP90N6F6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP90N6F6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C84A (Tc)
Power dissipation136W (Tc)
Operating temperature175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.8mOhm @ 38.5A, 10V
Gate charge (Qg) (Max) @ vgs74.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4295 pF @ 25 V

Product details

60 V / 84 A N-channel — the headline numbers

The STP90N6F6 is a 60 V, 84 A N-channel power MOSFET from STMicroelectronics' DeepGATE™ and STripFET™ VI trench-gate families. It is packaged in a through-hole TO-220-3, rated for junction temperatures up to 175°C.

The 6.8 mΩ Rds(on) at 10 V drive keeps conduction losses low for a 60 V device, but the gate charge of 74.9 nC means the driver needs to source and sink that charge per switching cycle — a 1 A gate driver gives roughly 75 ns rise time, which is fine for hard-switched converters in the 100–200 kHz range.

Frequently asked questions

What is a replacement for STP90N6F6?

A functionally similar N-channel 60 V MOSFET in a TO-220 package with comparable Rds(on) and gate charge would be the closest cross-shop candidate — evaluate based on your switching frequency and drive voltage before committing a BOM change.