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STMicroelectronics STP90N55F4 — Discrete Semiconductors

STP90N55F4 N-Channel MOSFET, 55V 90A, TO-220-3

MPNSTP90N55F4
Obsolete

STMicroelectronics DeepGATE™, STripFET™ series, N-Channel MOSFET, 55 V Vdss, 90 A continuous drain, 8 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55°C to 175°C junction temperature.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP90N55F4 specifications
ParameterValue
SeriesDeepGATE™, STripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C90A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 45A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4800 pF @ 25 V

Product details

The STP90N55F4 is an STMicroelectronics N-channel power MOSFET built on the DeepGATE™ and STripFET™ trench technology.

Sourcing a discontinued part — the surplus reality

STMicroelectronics lists the STP90N55F4 as obsolete. Independent distributors hold remaining inventory from last-time-buy cycles and excess stock. No direct factory or authorized-distributor pipeline remains.

Thermal and switching budget for the TO-220 build

The TO-220-3 through-hole package is rated for 150 W power dissipation at the case. The 4 V typical gate-threshold at 250 µA is a standard logic-level threshold; the drive voltage for minimum Rds(on) is 10 V, so a 12 V or 15 V gate rail is the right choice for lowest conduction loss.

Frequently asked questions

What are the specifications of STP90N55F4?

It comes in a TO-220-3 through-hole package.