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STMicroelectronics STP90N4F3 — Discrete Semiconductors

STP90N4F3 N-Channel MOSFET, 40V 80A TO-220-3

MPNSTP90N4F3
Obsolete

STMicroelectronics STripFET™ III series, N-Channel MOSFET, 40 V drain-source, 80 A continuous drain, 6.5 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$1.4900Ref. price · indicative, final on quote
STMicroelectronics STP90N4F3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP90N4F3 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs6.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V

Product details

40 V, 80 A N-channel in TO-220 — what it was designed for

STMicroelectronics lists the STP90N4F3 as obsolete. New builds should not rely on factory supply.

At full load, conduction loss (I²R) stays under 21 W at 80 A, but the 110 W package dissipation limit means a proper heatsink is mandatory — the TO-220 tab must be bolted to a thermal mass. Input capacitance of 2200 pF at 25 V Vds is typical for this die size and does not impose unusual layout constraints. The 4 V maximum gate threshold at 250 µA drain current means the device is fully enhanced with 10 V drive; at lower gate voltages (e.g., 5 V logic) the on-resistance rises significantly — the datasheet curve should be checked if 5 V gate drive is planned.

Frequently asked questions

Is STP90N4F3 obsolete or still available?

STP90N4F3 is listed as obsolete by STMicroelectronics. It is no longer in production. Availability is limited to surplus and broker inventory.

What is the replacement for STP90N4F3?

STMicroelectronics has not published an official successor for the STP90N4F3. For a new design, look at current STripFET™ or STripFET™ F7 series N-channel MOSFETs in TO-220 with similar 40 V / 80 A ratings — parametric search on Rds(on) and gate charge will identify the closest active alternative. For a legacy BOM that must stay pin-compatible, the independent channel is the only option.