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STMicroelectronics STP8NS25FP — Discrete Semiconductors

STP8NS25FP N-Channel MOSFET, 250 V, 8 A, TO-220FP

MPNSTP8NS25FP
Obsolete

STMicroelectronics MESH OVERLAY™ N-Channel MOSFET, STP8NS25FP, 250 V drain-source, 8 A continuous drain at 25°C, 450 mOhm max Rds(on) at 4 A, 10 V gate drive, TO-220-3 Full Pack through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP8NS25FP specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs450mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs51.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds770 pF @ 25 V

Product details

Gate charge and switching considerations

Maximum gate charge is 51.8 nC at 10 V gate drive, with an input capacitance of 770 pF at 25 V drain-source. These figures set the gate drive requirements for the switching frequency target — a 10 V gate signal with sufficient peak current to charge 51.8 nC within the desired turn-on time.

Thermal and mounting in the TO-220FP

Maximum power dissipation is 30 W at case temperature, with the junction rated to 150°C. The through-hole mounting suits point-to-point wiring, terminal blocks, or PCB mounting with the leads formed to the hole pattern. The isolated tab simplifies assembly but does increase thermal resistance compared to a standard TO-220 with an insulator; the heatsink design should account for the package's thermal impedance.

Frequently asked questions

Where can I buy STP8NS25FP?

No stock count or price is published here.

What is the Rds(on) of STP8NS25FP?

Maximum on-resistance is 450 mOhm at 4 A drain current with 10 V gate drive. This is the specified operating point for the Rds(on) rating.