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STMicroelectronics STP8NM60ND — Discrete Semiconductors

STP8NM60ND N-Channel MOSFET, 600 V, 7 A, TO-220

MPNSTP8NM60ND
Obsolete

STMicroelectronics STP8NM60ND, FDmesh™ II series, N-Channel MOSFET, 600 V Vdss, 7 A continuous drain, 700 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP8NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation70W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds560 pF @ 50 V

Product details

600 V N-channel in a TO-220 — what you are looking at

This is a medium-voltage, medium-current switch suited for offline power supplies, lighting ballasts, and AC-DC converters where 600 V blocking is needed and the 7 A rating covers the primary-side switching or PFC stage.

STMicroelectronics no longer manufactures this device in volume, and there is no official last-time-buy window remaining.

Gate drive and switching — what the 10 V spec tells you

The STP8NM60ND is specified with a drive voltage of 10 V for the rated on-resistance. The 700 mOhm Rds(on) is measured at 3.5 A with 10 V on the gate. The total gate charge is 22 nC at 10 V, and input capacitance is 560 pF at 50 V Vds, so the switching losses are moderate; a typical gate drive IC with a few hundred mA peak current will turn this device on and off fast enough for a 50-100 kHz switching frequency in a PFC or flyback stage.

Thermal — 70 W dissipation in a TO-220

In practice, a TO-220 without a heatsink will not handle more than a few watts continuous — the tab must be bolted to a heatsink or the PCB copper area for any real power. If your design runs the device near its current limit, the junction temperature rise needs to be calculated from the Rds(on) at operating temperature, not the 25 °C table value.

Frequently asked questions

What is a replacement for STP8NM60ND?

For a pin-compatible replacement in the same TO-220 footprint, look at ST's current FDmesh series with similar 600 V and 7 A ratings — the STx8NM60 series variants are a starting point, but verify the gate charge and Rds(on) against your design. Without an official cross-reference from ST, any substitute must be validated against the original's 700 mOhm Rds(on) at 10 V and 22 nC gate charge.