600 V N-channel MOSFET with MDmesh™ II technology — now obsolete
The STP8NM60N is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ II series. Packaged in the industry-standard TO-220-3 through-hole package, it suits through-hole assembly lines and bolted-down heatsink mounting.
For a production line that already qualifies this part, the remaining supply lives in independent distribution and surplus channels. Any stock found on the open market should be date-code verified against the original ST date codes to avoid re-marked or counterfeit devices. If you are designing a new power stage, avoid this part. Look at ST's current MDmesh series (e.g., MDmesh M5 or MDmesh K5) for a 600 V, 7 A class N-channel in TO-220 with comparable or better Rds(on) and gate charge — though pin compatibility and thermal footprint should be confirmed against the specific alternate's datasheet.
The 650 mΩ Rds(on) at 10 V gate drive sets the conduction loss at 3.5 A to about 8 W — factor in the 70 W package power limit and you have roughly 8× derating, which is comfortable for a TO-220 with a decent heatsink. The 19 nC gate charge is low for a 600 V device of this current class, meaning a simple gate-drive transformer or a small driver IC (e.g., 1 A peak) can switch it at 100 kHz without excessive driver dissipation. The ±25 V maximum gate-source rating gives margin against ringing on the gate node in layouts with long gate-drive traces.