STMicroelectronics MDmesh™ N-channel MOSFET, 650 V Vdss, 8 A continuous drain, 1 Ohm Rds(on) at 10 V, TO-220-3 Full Pack, through-hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 30W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 1Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 400 pF @ 25 V |
The 650 V Vdss is the maximum DC voltage the drain can withstand when the device is off. The gate charge of 18 nC at 10 V is moderate. Input capacitance of 400 pF at 25 V drain-source is low. The ±30 V maximum gate-source rating gives good margin against gate-drive overshoot in noisy environments.
The STP8NM60FP is obsolete and not available through standard distribution. We source it through independent supply channels against an RFQ — submit a request and we will confirm availability and current pricing at quote time.
A replacement would need to match the 650 V Vdss, 8 A continuous drain current, 1 Ohm Rds(on) at 10 V, and the TO-220FP full-pack package. Candidates from ST's current MDmesh™ portfolio or other manufacturers should be evaluated for pin-compatibility and electrical margin.