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STMicroelectronics STP8NM60D — Discrete Semiconductors

STP8NM60D MDmesh N-Channel MOSFET, 600V 8A TO-220

MPNSTP8NM60D
Obsolete

STMicroelectronics STP8NM60D, MDmesh™ N-Channel MOSFET, 600 V drain-to-source voltage, 8 A continuous drain current, 1 Ohm Rds(on) at 10 V, TO-220-3 through-hole package.

$1.5800Ref. price · indicative, final on quote
STMicroelectronics STP8NM60D datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP8NM60D specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation100W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds380 pF @ 25 V

Product details

600 V / 8 A N-channel MOSFET in TO-220

It is rated for a drain-to-source voltage of 600 V and a continuous drain current of 8 A at 25°C case temperature.

Switching performance and thermal budget

With a gate charge of 18 nC and input capacitance of 380 pF at 25 V drain-source, the STP8NM60D is suited for moderate-frequency switching in the tens of kilohertz range. The wide operating junction temperature range of -65°C to 150°C covers industrial and some automotive ambient conditions, though the part lacks AEC-Q101 qualification.

Frequently asked questions

What is the replacement for STP8NM60D?

No official replacement order code is recorded for the STP8NM60D. A pin-compatible alternative from the MDmesh™ family would need to be evaluated against the original design's 600 V, 8 A, and 1 Ohm Rds(on) specifications.