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STMicroelectronics STP8NM50N — Discrete Semiconductors

STP8NM50N N-Channel MOSFET, 500 V, 5 A, TO-220

MPNSTP8NM50N
Active

STMicroelectronics STP8NM50N, MDmesh™ II N-Channel MOSFET, 500 V drain-source, 5 A continuous drain, 790 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, active lifecycle.

$2.3800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP8NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation45W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs790mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds364 pF @ 50 V

Product details

The STP8NM50N is an STMicroelectronics N-channel power MOSFET from the MDmesh™ II family, built for high-voltage switching in the 500 V class.

The input capacitance of 364 pF at 50 V drain-source is low enough that the gate waveform stays clean with a standard 10 Ω to 22 Ω gate resistor, but the 150°C junction temperature rating means the thermal design must handle the sum of conduction and switching losses at full load.

The MDmesh II platform has been a workhorse for years, so the risk of a surprise EOL in the next procurement cycle is low — but as with any active part, the buyer should confirm current lead times and pricing at quote time.

Frequently asked questions

What is the Rds(on) of STP8NM50N?

The maximum on-resistance is 790 mOhm at 2.5 A drain current with 10 V gate drive.

What is the power dissipation of STP8NM50N?

The maximum power dissipation is 45 W at case temperature.

What is the drain current rating of STP8NM50N?

The continuous drain current is 5 A at 25°C case temperature.