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STMicroelectronics STP8NM50FP — Discrete Semiconductors

STP8NM50FP N-Channel MOSFET 550V 8A TO-220FP MDmesh

MPNSTP8NM50FP
Obsolete

STMicroelectronics MDmesh™ N-channel MOSFET, 550V drain-source, 8A continuous drain, 800mOhm Rds(on) at 10V, 13nC gate charge, TO-220-3 Full Pack through-hole package, -65°C to 150°C junction temperature.

$1.6400Ref. price · indicative, final on quote
STMicroelectronics STP8NM50FP datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP8NM50FP specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage550 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation25W (Tc)
Operating temperature-65°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs800mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds415 pF @ 25 V

Product details

550 V, 8 A N-channel MOSFET in a full-pack TO-220

The STP8NM50FP: The TO-220-3 Full Pack (TO-220FP) package has a fully isolated tab, allowing direct heatsink mounting without an insulating pad. This is a standard-threshold device (5 V max Vgs(th) at 250 µA), requiring 10 V gate drive for minimum Rds(on). Gate charge is 13 nC at 10 V. The MDmesh™ series uses a vertical multi-drain mesh structure to reduce the specific on-resistance while maintaining high breakdown voltage. This part is a good fit for offline flyback converters, single-switch PFC stages, and auxiliary power supplies where 550 V blocking and 8 A pulsed current cover the primary-side switch.

STMicroelectronics lists the STP8NM50FP as Obsolete. For production runs still using this part, the only channel is the surplus and independent distribution market — last-time-buy stock that has already left the factory.

Gate drive and switching considerations

The 13 nC total gate charge means the driver's peak current requirement is modest, but keep the gate loop physically tight to avoid ringing at turn-off. Junction temperature range is -65°C to 150°C.

Frequently asked questions

What is the difference between STP8NM50FP and STP8NM60FP?

The STP8NM60FP is a 600 V rated variant in the same MDmesh™ family and the same TO-220FP package. The 50FP is 550 V, the 60FP is 600 V — otherwise the parametric set (8 A, 800 mOhm Rds(on), 13 nC gate charge) is essentially identical. The 60FP is a direct pin-compatible drop-in if your design has the extra 50 V headroom.