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STMicroelectronics STP8NK80ZFP — Discrete Semiconductors

STP8NK80ZFP N-Channel MOSFET, 800 V, 1.5 Ohm, 6.2 A

MPNSTP8NK80ZFP
Active

STMicroelectronics SuperMESH™ series, STP8NK80ZFP, N-Channel MOSFET, 800 V drain-source, 1.5 Ohm Rds(on) at 10 V, 6.2 A continuous drain, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C.

$3.1300Ref. price · indicative, final on quote
STMicroelectronics STP8NK80ZFP datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP8NK80ZFP specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.2A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs1.5Ohm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1320 pF @ 25 V

Product details

800 V N-channel — the full-pack power switch for offline supplies

At 3.1 A drain current and 10 V gate drive, the Rds(on) is 1.5 Ohm maximum. Total gate charge is 46 nC at 10 V, so a 100 kHz switching frequency would draw about 4.6 mA from the gate driver — well within the capability of a standard MOSFET driver IC. Input capacitance is 1320 pF at 25 V drain-source, which influences the turn-on delay and the driver's peak current requirement.

Maximum power dissipation is 30 W at case temperature. For a repair tech, that means the heatsink needs to be sized for the actual load current and ambient, not the 6.2 A headline number.

Frequently asked questions

What is the Rds(on) of STP8NK80ZFP?

The maximum on-resistance is 1.5 Ohm at 3.1 A drain current with 10 V gate drive.