STMicroelectronics SuperMESH series, N-Channel MOSFET, 800 V drain-source voltage, 6.2 A continuous drain current at 25°C, 1.5 Ohm on-resistance at 10 V gate drive, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.2A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.5Ohm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 46 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1320 pF @ 25 V |
The STP8NK80Z comes in a through-hole TO-220-3 package. The 800 V Vdss suits offline flyback and forward converters.
Total gate charge is 46 nC at 10 V.
The TO-220 tab is the primary heat path; a proper thermal interface and mounting torque are assumed for any continuous load above a few watts.
Design engineers need full electrical specs and package details to validate fit.
Sourcing buyers need to compare cost for BOM budgeting.
Buyers need to check distributors for availability and lead time.
Brokers or buyers need alternatives if part is unavailable or for second sourcing.
Lifecycle status critical for long-term supply planning.
Key performance parameter for design validation.